Advances in Electronics and Electron Physics, Vol. 86 by Peter W. Hawkes (ed.)

By Peter W. Hawkes (ed.)

This sequence covers quite a lot of subject matters, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person elements of those tools to theoretical and sensible elements of contemporary electroinics. one other huge intterest is electronic picture processing and development acceptance, together with the units hired and the equipment built. Electron physics is interpreted very liberally and articles are usually integrated on fabrics of present curiosity in addition to at the units that hire them. the item of the sequence is to supply articles that can assessment a brand new or speedily constructing box, or may well hide decades of study, hence offering a small monograph on a particular topic. "Advances in Electronics and Electron Physics" quantity 86 beneficial properties articles at the following themes: GaAs semiconductor thoughts; photograph processing; N-beam calculators; and electron optics.

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IV. HETEROSTRUCTURE DRAM CELLS A . Introduction Heterostructure DRAM cells have been investigated by several groups. These cells can be classified into two types: (i) generation-limited cells, similar to the pn junction JFET and MESFET DRAM cells already discussed, in which the nonequilibrium state is a deficit of carriers and the cell returns to equilibrium by thermal generation, and (ii) leakage-limited cells, in which the nonequilibrium state is an excess of carriers and the cell returns to equilibrium by leakage of excess carriers over a potential barrier.

During each cycle, the memory is loaded with a four-bit data pattern and then presented with nine interrogation patterns. The boxes at the bottom indicate the data pattern written into each word of the memory. The boxes at the top indicate the nine interrogation patterns and the match line responses. A d represents a “don’t care” condition, implemented by taking both bit and bit-bar lines low; d bits always match the stored bit. memory. In the next nine cycles, all possible binary input patterns (including “don’t care” inputs) are presented and the match line outputs tabulated at the top of the figure.

This cell employs a linear gate rather than a ring gate, in order to minimize gate leakage current discharging the storage capacitor. now at ground potential. Thus the charge state of the cell can be determined by detecting the bit line potential when the access transistor is turned on. , 1990). Figure 25 shows the top view and cross section of an experimental MESFET DRAM cell (Neudeck, 1991). Notice that in this structure the ring gate has been replaced by a linear gate. Writing waveforms for the MESFET cell are shown in Fig.

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