Advances in Electronics and Electron Physics, Vol. 77 by Peter W. Hawkes (Ed.)

By Peter W. Hawkes (Ed.)

This quantity includes assessment articles overlaying a vast diversity of issues in snapshot processing and research. the themes lined comprise photograph research - which has united and harmonized a number of heterogeneous fabric; modern techniques to the Fourier remodel; quantity theoretic transforms, that are fairly beautiful for discrete, finite indications; using the Wigner distribution - which encodes either spatial and spectral details, for picture filtering; and functions of the concept that of knowledge power. those updated surveys are meant to supply the reader with entry to the newest leads to the super lively box of photograph technology.

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Some are defects in the TFT itself due to breakdown of the gate 26 SHINJI MOROZUMI insulator that cause the TFT to remain permanently ON or OFF. Others arise from short circuits at cross points between the gate and data lines, caused by damage from an electrostatic discharge or from defective patterns produced during photolithography. Also, open circuits caused by defective photolithography may arise in the data and gate lines. During the photolithographic process, several photomasks are used to produce the TFT and active-matrix substrate patterns.

As shown in Fig. 000/div(v) (b) FIG. 18. Structure and characteristics of a-Si very-thin-film transistor: (a) cross-sectional view of device with thin 40-nm a-Si layer; (b) typical electric characteristics of device; curves (1) and (2) show OFF characteristics in the dark and when illuminated with a fluorescent lamp of 10E4 lux, respectively. VDS is drain to source voltage. ) ACTIVE-MATRIX THIN-FILM TRANSISTOR LIQUID-CRYSTAL DISPLAYS 37 ratio of more than lo4 was obtained under illumination of a 10,000-lux fluorescent tube.

Dependence of poly-Si TFT characteristics on film thickness: with a thickness of less than 1,OOO A, the ON current is drastically increased due to the space charge reduction in the poly-Si film; the OFF current is also reduced by the thinner poly-Si film. fused and regrown to a larger size when scanned with a CW argon laser beam, resulting in a much higher electron mobility of up to 300 cm2/V sec. By employing hydrogenation, in which the poly-Si film is treated in a hydrogen plasma to reduce the number of grain boundary defects, the field-effect mobility has been increased up to 34 cm2/V sec and the threshold voltage decreased to 8 volts.

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